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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPN22006NH,LQ

TPN22006NH,LQ

TPN22006NH,LQ
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Part Number TPN22006NH,LQ
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N CH 60V 9A 8-TSON
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 151917 pcs
Reference Price
(In US Dollars)
3000 pcs
$0.129

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Quantity:
Total:
$0.129

Product parameter

Part Number TPN22006NH,LQ Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N CH 60V 9A 8-TSON Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 151917 pcs Data sheet TPN22006NH
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 100µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-TSON Advance (3.3x3.3) Series U-MOSVIII-H
Rds On (Max) @ Id, Vgs 22 mOhm @ 4.5A, 10V Power Dissipation (Max) 700mW (Ta), 18W (Tc)
Packaging Tape & Reel (TR) Package / Case 8-PowerVDFN
Other Names TPN22006NH,LQ(S
TPN22006NHLQ
TPN22006NHLQTR
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 710pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V
Drain to Source Voltage (Vdss) 60V Detailed Description N-Channel 60V 9A (Ta) 700mW (Ta), 18W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C 9A (Ta)

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