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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPN2010FNH,L1Q

TPN2010FNH,L1Q

TPN2010FNH,L1Q
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Part Number TPN2010FNH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 250V 5.6A 8TSON
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 68128 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.691$0.611$0.482$0.374$0.295

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Quantity:
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$0.691

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Part Number TPN2010FNH,L1Q Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 250V 5.6A 8TSON Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 68128 pcs Data sheet TPN2010FNH
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 200µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-TSON Advance (3.3x3.3) Series U-MOSVIII-H
Rds On (Max) @ Id, Vgs 198 mOhm @ 2.8A, 10V Power Dissipation (Max) 700mW (Ta), 39W (Tc)
Packaging Cut Tape (CT) Package / Case 8-PowerVDFN
Other Names TPN2010FNHL1QCT Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 600pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 250V Detailed Description N-Channel 250V 5.6A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C 5.6A (Ta)

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