TPN2R805PL,L1Q
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See Product Specifications for product details.
Buy TPN2R805PL,L1Q with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | TPN2R805PL,L1Q |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | X35 PB-F POWER MOSFET TRANSISTOR |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | 5000 pcs | ||||
|---|---|---|---|---|---|
| $0.159 | |||||
- Product parameter
- Data sheet
Product parameter
| Part Number | TPN2R805PL,L1Q | Manufacturer | Toshiba Semiconductor and Storage |
|---|---|---|---|
| Description | X35 PB-F POWER MOSFET TRANSISTOR | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 136523 pcs | Data sheet | TPN2R805PL |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 2.4V @ 300µA |
| Vgs (Max) | ±20V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) | Series | U-MOSIX-H |
| Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 40A, 10V | Power Dissipation (Max) | 2.67W (Ta), 104W (Tc) |
| Package / Case | 8-PowerVDFN | Other Names | TPN2R805PLL1Q |
| Operating Temperature | 175°C | Mounting Type | Surface Mount |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 3.2nF @ 22.5V |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 45V | Detailed Description | N-Channel 45V 139A (Ta), 80A (Tc) 2.67W (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
| Current - Continuous Drain (Id) @ 25°C | 139A (Ta), 80A (Tc) |
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