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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPN14006NH,L1Q

TPN14006NH,L1Q

TPN14006NH,L1Q
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Part Number TPN14006NH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N CH 60V 13A 8TSON-ADV
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 175959 pcs
Reference Price
(In US Dollars)
5000 pcs
$0.126

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Quantity:
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$0.126

Product parameter

Part Number TPN14006NH,L1Q Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N CH 60V 13A 8TSON-ADV Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 175959 pcs Data sheet TPN14006NH
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 200µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-TSON Advance (3.3x3.3) Series U-MOSVIII-H
Rds On (Max) @ Id, Vgs 14 mOhm @ 6.5A, 10V Power Dissipation (Max) 700mW (Ta), 30W (Tc)
Packaging Tape & Reel (TR) Package / Case 8-PowerVDFN
Other Names TPN14006NH,L1Q(M
TPN14006NHL1Q
TPN14006NHL1QTR
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V
Drain to Source Voltage (Vdss) 60V Detailed Description N-Channel 60V 13A (Ta) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C 13A (Ta)

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