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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPN11006NL,LQ

TPN11006NL,LQ

TPN11006NL,LQ
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Part Number TPN11006NL,LQ
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 60V 17A 8TSON
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 164517 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.363$0.319$0.246$0.182$0.146

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$0.363

Product parameter

Part Number TPN11006NL,LQ Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 60V 17A 8TSON Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 164517 pcs Data sheet TPN11006NL
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 200µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-TSON Advance (3.3x3.3) Series U-MOSVIII-H
Rds On (Max) @ Id, Vgs 11.4 mOhm @ 8.5A, 10V Power Dissipation (Max) 700mW (Ta), 30W (Tc)
Packaging Original-Reel® Package / Case 8-PowerVDFN
Other Names TPN11006NLLQDKR Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60V Detailed Description N-Channel 60V 17A (Tc) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C 17A (Tc)

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