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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPN1600ANH,L1Q

TPN1600ANH,L1Q

TPN1600ANH,L1Q
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Part Number TPN1600ANH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N CH 100V 17A 8TSON-ADV
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 202140 pcs
Reference Price
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$0.256$0.224$0.173$0.128$0.102

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$0.256

Product parameter

Part Number TPN1600ANH,L1Q Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N CH 100V 17A 8TSON-ADV Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 202140 pcs Data sheet TPN1600ANH
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 200µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-TSON Advance (3.3x3.3) Series U-MOSVIII-H
Rds On (Max) @ Id, Vgs 16 mOhm @ 8.5A, 10V Power Dissipation (Max) 700mW (Ta), 42W (Tc)
Packaging Cut Tape (CT) Package / Case 8-PowerVDFN
Other Names TPN1600ANHL1QCT Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 17A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C 17A (Tc)

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