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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPN3300ANH,LQ

TPN3300ANH,LQ

TPN3300ANH,LQ
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Part Number TPN3300ANH,LQ
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 100V 9.4A 8TSON
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 145868 pcs
Reference Price
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1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.397$0.349$0.269$0.199$0.159

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$0.397

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Part Number TPN3300ANH,LQ Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 100V 9.4A 8TSON Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 145868 pcs Data sheet TPN3300ANH
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 100µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-TSON Advance (3.3x3.3) Series U-MOSVIII-H
Rds On (Max) @ Id, Vgs 33 mOhm @ 4.7A, 10V Power Dissipation (Max) 700mW (Ta), 27W (Tc)
Packaging Original-Reel® Package / Case 8-PowerVDFN
Other Names TPN3300ANHLQDKR Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 880pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 9.4A (Tc) 700mW (Ta), 27W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)

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