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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGT1S3N60A4DS9A

HGT1S3N60A4DS9A

HGT1S3N60A4DS9A
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Part Number HGT1S3N60A4DS9A
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 17A 70W D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4759 pcs
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Part Number HGT1S3N60A4DS9A Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 17A 70W D2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4759 pcs Data sheet HGT1S3N60A4DS, HGTP3N60A4D
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 3A Test Condition 390V, 3A, 50 Ohm, 15V
Td (on/off) @ 25°C 6ns/73ns Switching Energy 37µJ (on), 25µJ (off)
Supplier Device Package TO-263AB Series -
Reverse Recovery Time (trr) 29ns Power - Max 70W
Packaging Tube Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard IGBT Type -
Gate Charge 21nC Detailed Description IGBT 600V 17A 70W Surface Mount TO-263AB
Current - Collector Pulsed (Icm) 40A Current - Collector (Ic) (Max) 17A

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