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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGT1S10N120BNST

HGT1S10N120BNST

HGT1S10N120BNST
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number HGT1S10N120BNST
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 35A 298W TO263AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 53032 pcs
Reference Price
(In US Dollars)		800 pcs1600 pcs2400 pcs
$0.821$0.693$0.66

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$0.821

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Part Number HGT1S10N120BNST Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 35A 298W TO263AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 53032 pcs Data sheet HGT(G,P)10N120BN, HGT1S10N120BNS
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A Test Condition 960V, 10A, 10 Ohm, 15V
Td (on/off) @ 25°C 23ns/165ns Switching Energy 320µJ (on), 800µJ (off)
Supplier Device Package TO-263AB Series -
Power - Max 298W Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Other Names HGT1S10N120BNST-ND
HGT1S10N120BNSTTR
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 44 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Type Standard
IGBT Type NPT Gate Charge 100nC
Detailed Description IGBT NPT 1200V 35A 298W Surface Mount TO-263AB Current - Collector Pulsed (Icm) 80A
Current - Collector (Ic) (Max) 35A Base Part Number HGT1S10N120

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