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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGT1S7N60A4DS

HGT1S7N60A4DS

HGT1S7N60A4DS
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Part Number HGT1S7N60A4DS
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 34A 125W TO263AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4590 pcs
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Part Number HGT1S7N60A4DS Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 34A 125W TO263AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4590 pcs Data sheet HGT(G,P)7N60A4D, HGT1S7N60A4DS
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A Test Condition 390V, 7A, 25 Ohm, 15V
Td (on/off) @ 25°C 11ns/100ns Switching Energy 55µJ (on), 60µJ (off)
Supplier Device Package TO-263AB Series -
Reverse Recovery Time (trr) 34ns Power - Max 125W
Packaging Tube Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard IGBT Type -
Gate Charge 37nC Detailed Description IGBT 600V 34A 125W Surface Mount TO-263AB
Current - Collector Pulsed (Icm) 56A Current - Collector (Ic) (Max) 34A

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