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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGT1S2N120CN

HGT1S2N120CN

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Part Number HGT1S2N120CN
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 13A 104W I2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4867 pcs
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Part Number HGT1S2N120CN Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 13A 104W I2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4867 pcs Data sheet HGT(P2,1S)2N120CN
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 2.6A Test Condition 960V, 2.6A, 51 Ohm, 15V
Td (on/off) @ 25°C 25ns/205ns Switching Energy 96µJ (on), 355µJ (off)
Supplier Device Package TO-262 Series -
Power - Max 104W Packaging Tube
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Type Standard
IGBT Type NPT Gate Charge 30nC
Detailed Description IGBT NPT 1200V 13A 104W Through Hole TO-262 Current - Collector Pulsed (Icm) 20A
Current - Collector (Ic) (Max) 13A

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