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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGT1S12N60A4S9A

HGT1S12N60A4S9A

HGT1S12N60A4S9A
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Part Number HGT1S12N60A4S9A
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 54A 167W TO263AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5513 pcs
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Part Number HGT1S12N60A4S9A Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 54A 167W TO263AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5513 pcs Data sheet HGT(P,G)12N60A4, HGT1S12N60A4S9A
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A Test Condition 390V, 12A, 10 Ohm, 15V
Td (on/off) @ 25°C 17ns/96ns Switching Energy 55µJ (on), 50µJ (off)
Supplier Device Package TO-263AB Series -
Power - Max 167W Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Other Names HGT1S12N60A4S9ATR
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard IGBT Type -
Gate Charge 78nC Detailed Description IGBT 600V 54A 167W Surface Mount TO-263AB
Current - Collector Pulsed (Icm) 96A Current - Collector (Ic) (Max) 54A
Base Part Number HGT1S12N60

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