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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGT1S20N60A4S9A

HGT1S20N60A4S9A

HGT1S20N60A4S9A
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Part Number HGT1S20N60A4S9A
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 70A 290W TO263AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 6012 pcs
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Part Number HGT1S20N60A4S9A Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 70A 290W TO263AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 6012 pcs Data sheet HGT1S20N60A4S9A
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A Test Condition 390V, 20A, 3 Ohm, 15V
Td (on/off) @ 25°C 15ns/73ns Switching Energy 105µJ (on), 150µJ (off)
Supplier Device Package TO-263AB Series -
Power - Max 290W Packaging Tube
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Type Standard
IGBT Type - Gate Charge 142nC
Detailed Description IGBT 600V 70A 290W Surface Mount TO-263AB Current - Collector Pulsed (Icm) 280A
Current - Collector (Ic) (Max) 70A

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