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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTG10N120BND

HGTG10N120BND

HGTG10N120BND
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number HGTG10N120BND
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 35A 298W TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 43563 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs450 pcs900 pcs1350 pcs
$1.377$1.236$0.96$0.862$0.727

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$1.377

Product parameter

Part Number HGTG10N120BND Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 35A 298W TO247 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 43563 pcs Data sheet HGTG10N120BND
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A Test Condition 960V, 10A, 10 Ohm, 15V
Td (on/off) @ 25°C 23ns/165ns Switching Energy 850µJ (on), 800µJ (off)
Supplier Device Package TO-247 Series -
Reverse Recovery Time (trr) 70ns Power - Max 298W
Packaging Tube Package / Case TO-247-3
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard IGBT Type NPT
Gate Charge 100nC Detailed Description IGBT NPT 1200V 35A 298W Through Hole TO-247
Current - Collector Pulsed (Icm) 80A Current - Collector (Ic) (Max) 35A

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