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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTD3N60C3S9A

HGTD3N60C3S9A

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Part Number HGTD3N60C3S9A
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 6A 33W TO252AA
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4802 pcs
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Part Number HGTD3N60C3S9A Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 6A 33W TO252AA Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4802 pcs Data sheet HGTD3N60C3S, HGTP3N60C3
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 3A Test Condition 480V, 3A, 82 Ohm, 15V
Td (on/off) @ 25°C - Switching Energy 85µJ (on), 245µJ (off)
Supplier Device Package TO-252AA Series -
Power - Max 33W Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Type Standard
IGBT Type - Gate Charge 10.8nC
Detailed Description IGBT 600V 6A 33W Surface Mount TO-252AA Current - Collector Pulsed (Icm) 24A
Current - Collector (Ic) (Max) 6A

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