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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1109ACT(TPL3)

RN1109ACT(TPL3)

RN1109ACT(TPL3)
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Part Number RN1109ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W CST3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4841 pcs
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Part Number RN1109ACT(TPL3) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W CST3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4841 pcs Data sheet RN1107ACT-09ACT
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA Transistor Type NPN - Pre-Biased
Supplier Device Package CST3 Series -
Resistor - Emitter Base (R2) 22 kOhms Resistor - Base (R1) 47 kOhms
Power - Max 100mW Packaging Tape & Reel (TR)
Package / Case SC-101, SOT-883 Other Names RN1109ACT(TPL3)TR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 80mA

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