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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1109,LF(CT

RN1109,LF(CT

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Part Number	RN1109,LF(CT
Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 100MW SSM
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 1921822 pcs
Reference Price (In US Dollars)	3000 pcs
Reference Price (In US Dollars)	$0.013

Product parameter
Data sheet

Product parameter

Part Number	RN1109,LF(CT	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 100MW SSM	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1921822 pcs	Data sheet	RN1107-09
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA	Transistor Type	NPN - Pre-Biased
Supplier Device Package	SSM	Series	-
Resistor - Emitter Base (R2)	22 kOhms	Resistor - Base (R1)	47 kOhms
Power - Max	100mW	Packaging	Tape & Reel (TR)
Package / Case	SC-75, SOT-416	Other Names	RN1109,LF(CB RN1109LF(CT
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	100mA

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