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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1110ACT(TPL3)

RN1110ACT(TPL3)

RN1110ACT(TPL3)
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Part Number RN1110ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W CST3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1015500 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs25 pcs100 pcs250 pcs
$0.152$0.11$0.085$0.064$0.046
500 pcs1000 pcs2500 pcs5000 pcs 
$0.036$0.028$0.024$0.022 

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Target Price:(USD)
Quantity:
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$0.152

Product parameter

Part Number RN1110ACT(TPL3) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W CST3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1015500 pcs Data sheet
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA Transistor Type NPN - Pre-Biased
Supplier Device Package CST3 Series -
Resistor - Base (R1) 47 kOhms Power - Max 100mW
Packaging Cut Tape (CT) Package / Case SC-101, SOT-883
Other Names RN1110ACT(TPL3)CT Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3 DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 80mA

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