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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1106MFV(TL3,T)

RN1106MFV(TL3,T)

RN1106MFV(TL3,T)
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Part Number RN1106MFV(TL3,T)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.15W VESM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5175 pcs
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Part Number RN1106MFV(TL3,T) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.15W VESM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5175 pcs Data sheet RN1101-6MFV
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA Transistor Type NPN - Pre-Biased
Supplier Device Package VESM Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 4.7 kOhms
Power - Max 150mW Packaging Cut Tape (CT)
Package / Case SOT-723 Other Names RN1106MFV(TL3T)CT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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