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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1106MFV,L3F

RN1106MFV,L3F

RN1106MFV,L3F
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Part Number RN1106MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4122737 pcs
Reference Price
(In US Dollars)		8000 pcs16000 pcs24000 pcs56000 pcs200000 pcs
$0.01$0.008$0.008$0.007$0.006

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Part Number RN1106MFV,L3F Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4122737 pcs Data sheet RN1101MFV - RN1106MFV
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA Transistor Type NPN - Pre-Biased
Supplier Device Package VESM Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 4.7 kOhms
Power - Max 150mW Packaging Tape & Reel (TR)
Package / Case SOT-723 Other Names RN1106MFV,L3F(B
RN1106MFV,L3F(T
RN1106MFVL3F
RN1106MFVL3F(B
RN1106MFVL3F(T
RN1106MFVL3F-ND
RN1106MFVL3FTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA

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