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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1110MFV,L3F

RN1110MFV,L3F

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Part Number	RN1110MFV,L3F
Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.15W VESM
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 2431569 pcs
Reference Price (In US Dollars)	8000 pcs
Reference Price (In US Dollars)	$0.01

Product parameter
Data sheet

Product parameter

Part Number	RN1110MFV,L3F	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.15W VESM	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	2431569 pcs	Data sheet	RN111xMFV
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA	Transistor Type	NPN - Pre-Biased
Supplier Device Package	VESM	Series	-
Resistor - Base (R1)	4.7 kOhms	Power - Max	150mW
Packaging	Tape & Reel (TR)	Package / Case	SOT-723
Other Names	RN1110MFV(TL3,T) RN1110MFV(TL3T)TR RN1110MFV(TL3T)TR-ND RN1110MFV,L3F(B RN1110MFV,L3F(T RN1110MFVL3F RN1110MFVL3F-ND RN1110MFVL3FTR RN1110MFVTL3T	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	16 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	100mA

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