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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1105,LF(CT

RN1105,LF(CT

RN1105,LF(CT
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Part Number RN1105,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 50V 0.1W SSM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 2308935 pcs
Reference Price
(In US Dollars)		3000 pcs6000 pcs15000 pcs
$0.017$0.015$0.013
30000 pcs75000 pcs150000 pcs
$0.012$0.011$0.01

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Quantity:
Total:
$0.017

Product parameter

Part Number RN1105,LF(CT Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 50V 0.1W SSM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2308935 pcs Data sheet RN1101-06
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type NPN - Pre-Biased
Supplier Device Package SSM Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 100mW Packaging Tape & Reel (TR)
Package / Case SC-75, SOT-416 Other Names RN1105 (T5L,F,T)
RN1105(T5L,F,T)
RN1105(T5LFT)TR
RN1105(T5LFT)TR-ND
RN1105,LF(CB
RN1105LF(CT
RN1105LF(CT-ND
RN1105LF(CTTR
RN1105T5LFT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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