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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1105MFV,L3F

RN1105MFV,L3F

RN1105MFV,L3F
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Part Number RN1105MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.15W VESM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1871012 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs25 pcs100 pcs
$0.071$0.066$0.06$0.043
250 pcs500 pcs1000 pcs2500 pcs
$0.025$0.021$0.014$0.012

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Target Price:(USD)
Quantity:
Total:
$0.071

Product parameter

Part Number RN1105MFV,L3F Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.15W VESM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1871012 pcs Data sheet RN1101-6MFV
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA Transistor Type NPN - Pre-Biased
Supplier Device Package VESM Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 150mW Packaging Cut Tape (CT)
Package / Case SOT-723 Other Names RN1105MFV(TL3T)CT
RN1105MFV(TL3T)CT-ND
RN1105MFV,L3FCT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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