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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTD123ECT116

DTD123ECT116

DTD123ECT116
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Part Number DTD123ECT116
Manufacturer LAPIS Semiconductor
Description NPN 500MA/50V DIGITAL TRANSISTOR
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1106088 pcs
Reference Price
(In US Dollars)		3000 pcs
$0.021

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$0.021

Product parameter

Part Number DTD123ECT116 Manufacturer LAPIS Semiconductor
Description NPN 500MA/50V DIGITAL TRANSISTOR Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1106088 pcs Data sheet SOT-23 T116 Taping SpecDTD123EC
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Transistor Type NPN - Pre-Biased
Supplier Device Package SST3 Series -
Resistor - Emitter Base (R2) 2.2 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 200mW Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3 Other Names DTD123ECMGT116
DTD123ECT116TR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 10 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SST3
DC Current Gain (hFE) (Min) @ Ic, Vce 39 @ 50mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 500mA

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