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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTD114GCT116

DTD114GCT116

DTD114GCT116
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number DTD114GCT116
Manufacturer LAPIS Semiconductor
Description NPN 500MA/50V DIGITAL TRANSISTOR
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 999967 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.136$0.124$0.069$0.037$0.025

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$0.136

Product parameter

Part Number DTD114GCT116 Manufacturer LAPIS Semiconductor
Description NPN 500MA/50V DIGITAL TRANSISTOR Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 999967 pcs Data sheet SOT-23 T116 Taping SpecDTD114GC
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Transistor Type NPN - Pre-Biased
Supplier Device Package SST3 Series -
Resistor - Emitter Base (R2) 10 kOhms Power - Max 200mW
Packaging Original-Reel® Package / Case TO-236-3, SC-59, SOT-23-3
Other Names DTD114GCT116DKR Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 10 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SST3 DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V
Current - Collector Cutoff (Max) 500nA (ICBO) Current - Collector (Ic) (Max) 500mA

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