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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTD113ZUT106

DTD113ZUT106

DTD113ZUT106
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Part Number DTD113ZUT106
Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 200MW UMT3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 485185 pcs
Reference Price
(In US Dollars)		3000 pcs6000 pcs15000 pcs30000 pcs
$0.054$0.051$0.048$0.044

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Part Number DTD113ZUT106 Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 200MW UMT3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 485185 pcs Data sheet UMT3 T106 Taping SpecDTD113ZU
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Transistor Type NPN - Pre-Biased
Supplier Device Package UMT3 Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 1 kOhms
Power - Max 200mW Packaging Tape & Reel (TR)
Package / Case SC-70, SOT-323 Other Names DTD113ZUT106-ND
DTD113ZUT106TR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 10 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 50mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 500mA Base Part Number DTD113

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