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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTD114ESTP

DTD114ESTP

DTD114ESTP
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Part Number DTD114ESTP
Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 300MW SPT
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4147 pcs
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Part Number DTD114ESTP Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 300MW SPT Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4147 pcs Data sheet DTD114E(K,S)
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Transistor Type NPN - Pre-Biased
Supplier Device Package SPT Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 300mW Packaging Tape & Box (TB)
Package / Case SC-72 Formed Leads Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 300mW Through Hole SPT
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 500mA Base Part Number DTD114

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