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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTD123TSTP

DTD123TSTP

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Part Number	DTD123TSTP
Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 300MW SPT
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4676 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	DTD123TSTP	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 300MW SPT	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4676 pcs	Data sheet	DTD123TK,TS
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA	Transistor Type	NPN - Pre-Biased
Supplier Device Package	SPT	Series	-
Resistor - Base (R1)	2.2 kOhms	Power - Max	300mW
Packaging	Tape & Reel (TR)	Package / Case	SC-72 Formed Leads
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	200MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 500mA 200MHz 300mW Through Hole SPT	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 5V
Current - Collector Cutoff (Max)	500nA (ICBO)	Current - Collector (Ic) (Max)	500mA
Base Part Number	DTD123

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