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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTD133HKT146

DTD133HKT146

DTD133HKT146
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Part Number DTD133HKT146
Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 200MW SMT3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4867 pcs
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Part Number DTD133HKT146 Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 200MW SMT3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4867 pcs Data sheet DTD133H
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Transistor Type NPN - Pre-Biased
Supplier Device Package SMT3 Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 3.3 kOhms
Power - Max 200mW Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 500mA Base Part Number DTD133

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