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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI3590DV-T1-E3

SI3590DV-T1-E3

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Part Number	SI3590DV-T1-E3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 30V 2.5A 6TSOP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 204990 pcs
Reference Price (In US Dollars)	3000 pcs
Reference Price (In US Dollars)	$0.095

Product parameter
Data sheet

Product parameter

Part Number	SI3590DV-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 30V 2.5A 6TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	204990 pcs	Data sheet	SI3590DV
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	6-TSOP	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	77 mOhm @ 3A, 4.5V	Power - Max	830mW
Packaging	Tape & Reel (TR)	Package / Case	SOT-23-6 Thin, TSOT-23-6
Other Names	SI3590DV-T1-E3TR SI3590DVT1E3	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	33 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	-	Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 4.5V
FET Type	N and P-Channel	FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V	Detailed Description	Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C	2.5A, 1.7A	Base Part Number	SI3590

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