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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI3552DV-T1-GE3

SI3552DV-T1-GE3

SI3552DV-T1-GE3

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Part Number	SI3552DV-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 30V 6-TSOP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 167933 pcs
Reference Price (In US Dollars)	3000 pcs
Reference Price (In US Dollars)	$0.128

Product parameter
Data sheet

Product parameter

Part Number	SI3552DV-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 30V 6-TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	167933 pcs	Data sheet	SI3552DV
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	1V @ 250µA (Min)
Supplier Device Package	6-TSOP	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	105 mOhm @ 2.5A, 10V	Power - Max	1.15W
Packaging	Tape & Reel (TR)	Package / Case	SOT-23-6 Thin, TSOT-23-6
Other Names	SI3552DV-T1-GE3TR SI3552DVT1GE3	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	33 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	-	Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 5V
FET Type	N and P-Channel	FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V	Detailed Description	Mosfet Array N and P-Channel 30V 1.15W Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C	-	Base Part Number	SI3552

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