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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI3585DV-T1-GE3

SI3585DV-T1-GE3

SI3585DV-T1-GE3

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Part Number	SI3585DV-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 20V 2A 6-TSOP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4191 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI3585DV-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 20V 2A 6-TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4191 pcs	Data sheet	SI3585DV
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	600mV @ 250µA (Min)
Supplier Device Package	6-TSOP	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	125 mOhm @ 2.4A, 4.5V	Power - Max	830mW
Packaging	Cut Tape (CT)	Package / Case	SOT-23-6 Thin, TSOT-23-6
Other Names	SI3585DV-T1-GE3CT	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 4.5V	FET Type	N and P-Channel
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	20V
Detailed Description	Mosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP	Current - Continuous Drain (Id) @ 25°C	2A, 1.5A
Base Part Number	SI3585

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