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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI3812DV-T1-E3

SI3812DV-T1-E3

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Part Number	SI3812DV-T1-E3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 20V 2A 6-TSOP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5108 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI3812DV-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 20V 2A 6-TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5108 pcs	Data sheet	SI3812DV
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	600mV @ 250µA (Min)
Vgs (Max)	±12V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	6-TSOP	Series	LITTLE FOOT®
Rds On (Max) @ Id, Vgs	125 mOhm @ 2.4A, 4.5V	Power Dissipation (Max)	830mW (Ta)
Packaging	Tape & Reel (TR)	Package / Case	SOT-23-6 Thin, TSOT-23-6
Other Names	SI3812DV-T1-E3TR	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
FET Type	N-Channel	FET Feature	Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	N-Channel 20V 2A (Ta) 830mW (Ta) Surface Mount 6-TSOP	Current - Continuous Drain (Id) @ 25°C	2A (Ta)

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