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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI3529DV-T1-GE3

SI3529DV-T1-GE3

SI3529DV-T1-GE3

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Part Number	SI3529DV-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 40V 2.5A 6-TSOP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5706 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI3529DV-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 40V 2.5A 6-TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5706 pcs	Data sheet	SI3529DV
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	6-TSOP	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	125 mOhm @ 2.2A, 10V	Power - Max	1.4W
Packaging	Tape & Reel (TR)	Package / Case	SOT-23-6 Thin, TSOT-23-6
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	205pF @ 20V	Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
FET Type	N and P-Channel	FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	40V	Detailed Description	Mosfet Array N and P-Channel 40V 2.5A, 1.95A 1.4W Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C	2.5A, 1.95A

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