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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI3851DV-T1-E3

SI3851DV-T1-E3

SI3851DV-T1-E3
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Part Number SI3851DV-T1-E3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 30V 1.6A 6-TSOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 229715 pcs
Reference Price
(In US Dollars)		3000 pcs
$0.083

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Target Price:(USD)
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$0.083

Product parameter

Part Number SI3851DV-T1-E3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 30V 1.6A 6-TSOP Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 229715 pcs Data sheet SI3851DV
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1V @ 250µA (Min)
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 6-TSOP Series LITTLE FOOT®
Rds On (Max) @ Id, Vgs 200 mOhm @ 1.8A, 10V Power Dissipation (Max) 830mW (Ta)
Packaging Tape & Reel (TR) Package / Case SOT-23-6 Thin, TSOT-23-6
Other Names SI3851DV-T1-E3TR Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 21 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 5V FET Type P-Channel
FET Feature Schottky Diode (Isolated) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V Detailed Description P-Channel 30V 1.6A (Ta) 830mW (Ta) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)

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