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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE180PWD

MJE180PWD

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Part Number	MJE180PWD
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 40V 3A
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5268 pcs
Reference Price (In US Dollars)	Get a quote

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Product parameter

Part Number	MJE180PWD	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 40V 3A	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5268 pcs	Data sheet	MJE180-MJE182
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	1.7V @ 600mA, 3A	Transistor Type	NPN
Supplier Device Package	TO-126	Series	-
Power - Max	1.5W	Packaging	Bulk
Package / Case	TO-225AA, TO-126-3	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	50MHz
Detailed Description	Bipolar (BJT) Transistor NPN 40V 3A 50MHz 1.5W Through Hole TO-126	DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	3A
Base Part Number	MJE180

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