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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE181G

MJE181G

MJE181G
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Part Number MJE181G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 60V 3A TO225AA
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 287591 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.192$0.166$0.124$0.097$0.075

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Target Price:(USD)
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$0.192

Product parameter

Part Number MJE181G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 60V 3A TO225AA Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 287591 pcs Data sheet MJE170, 71, 72, 80, 81, 82
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A Transistor Type NPN
Supplier Device Package TO-225AA Series -
Power - Max 1.5W Packaging Bulk
Package / Case TO-225AA, TO-126-3 Other Names MJE181GOS
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 4 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 50MHz
Detailed Description Bipolar (BJT) Transistor NPN 60V 3A 50MHz 1.5W Through Hole TO-225AA DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 1V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 3A
Base Part Number MJE181

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