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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE18004G

MJE18004G

MJE18004G
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Part Number MJE18004G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 450V 5A TO220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 147727 pcs
Reference Price
(In US Dollars)		1 pcs50 pcs100 pcs500 pcs1000 pcs
$0.324$0.276$0.227$0.187$0.148

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Part Number MJE18004G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 450V 5A TO220AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 147727 pcs Data sheet MJE18004, MJF18004
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 450V
Vce Saturation (Max) @ Ib, Ic 750mV @ 500mA, 2.5A Transistor Type NPN
Supplier Device Package TO-220AB Series SWITCHMODE™
Power - Max 75W Packaging Tube
Package / Case TO-220-3 Other Names MJE18004GOS
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 2 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 13MHz
Detailed Description Bipolar (BJT) Transistor NPN 450V 5A 13MHz 75W Through Hole TO-220AB DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 300mA, 5V
Current - Collector Cutoff (Max) 100µA Current - Collector (Ic) (Max) 5A
Base Part Number MJE18004

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