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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE18002G

MJE18002G

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Part Number	MJE18002G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 450V 2A TO220AB
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4212 pcs
Reference Price (In US Dollars)	Get a quote

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Product parameter

Part Number	MJE18002G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 450V 2A TO220AB	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4212 pcs	Data sheet	MJE18002
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	450V
Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 1A	Transistor Type	NPN
Supplier Device Package	TO-220AB	Series	SWITCHMODE™
Power - Max	50W	Packaging	Tube
Package / Case	TO-220-3	Other Names	MJE18002GOS
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	13MHz	Detailed Description	Bipolar (BJT) Transistor NPN 450V 2A 13MHz 50W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce	14 @ 200mA, 5V	Current - Collector Cutoff (Max)	100µA
Current - Collector (Ic) (Max)	2A

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