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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE18008G

MJE18008G

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Part Number	MJE18008G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 450V 8A TO220AB
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 75490 pcs
Reference Price (In US Dollars)	1 pcs	50 pcs	100 pcs	500 pcs	1000 pcs
Reference Price (In US Dollars)	$0.556	$0.473	$0.388	$0.321	$0.253

Product parameter
Data sheet

Product parameter

Part Number	MJE18008G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 450V 8A TO220AB	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	75490 pcs	Data sheet	MJE18008, MJF18008
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	450V
Vce Saturation (Max) @ Ib, Ic	700mV @ 900mA, 4.5V	Transistor Type	NPN
Supplier Device Package	TO-220AB	Series	SWITCHMODE™
Power - Max	125W	Packaging	Tube
Package / Case	TO-220-3	Other Names	MJE18008GOS
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	14 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	13MHz
Detailed Description	Bipolar (BJT) Transistor NPN 450V 8A 13MHz 125W Through Hole TO-220AB	DC Current Gain (hFE) (Min) @ Ic, Vce	14 @ 1A, 5V
Current - Collector Cutoff (Max)	100µA	Current - Collector (Ic) (Max)	8A

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