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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE200G

MJE200G

MJE200G
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Part Number MJE200G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 40V 5A TO225AA
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 274711 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.199$0.171$0.128$0.10$0.078

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Target Price:(USD)
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$0.199

Product parameter

Part Number MJE200G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 40V 5A TO225AA Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 274711 pcs Data sheet MJE200,210
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A Transistor Type NPN
Supplier Device Package TO-225AA Series -
Power - Max 15W Packaging Bulk
Package / Case TO-225AA, TO-126-3 Other Names MJE200GOS
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 4 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 65MHz
Detailed Description Bipolar (BJT) Transistor NPN 40V 5A 65MHz 15W Through Hole TO-225AA DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A, 1V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 5A
Base Part Number MJE200

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