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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD117-1G

MJD117-1G

MJD117-1G
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number MJD117-1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP DARL 100V 2A IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 239301 pcs
Reference Price
(In US Dollars)		1 pcs75 pcs150 pcs525 pcs1050 pcs
$0.241$0.192$0.154$0.121$0.093

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Product parameter

Part Number MJD117-1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP DARL 100V 2A IPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 239301 pcs Data sheet MJD112,117
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A Transistor Type PNP - Darlington
Supplier Device Package I-PAK Series -
Power - Max 1.75W Packaging Tube
Package / Case TO-251-3 Short Leads, IPak, TO-251AA Other Names MJD117-1G-ND
MJD117-1GOS
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 6 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 25MHz
Detailed Description Bipolar (BJT) Transistor PNP - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Current - Collector Cutoff (Max) 20µA Current - Collector (Ic) (Max) 2A
Base Part Number MJD117

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