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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD122-1

MJD122-1

MJD122-1
OMRON AUTOMATION & SAFETYImages are for reference only.
See Product Specifications for product details.
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Part Number MJD122-1
Manufacturer STMicroelectronics
Description TRANS NPN DARL 100V 8A TO251
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 153563 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.342$0.30$0.23$0.181$0.145

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Target Price:(USD)
Quantity:
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$0.342

Product parameter

Part Number MJD122-1 Manufacturer STMicroelectronics
Description TRANS NPN DARL 100V 8A TO251 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 153563 pcs Data sheet MJD122(T4,-1), MJD127(T4,-1)
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A Transistor Type NPN - Darlington
Supplier Device Package TO-251-3 Series -
Power - Max 20W Packaging Bulk
Package / Case TO-251-3 Short Leads, IPak, TO-251AA Other Names 497-16183
MJD122-1-ND
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition - Detailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 8A 20W Through Hole TO-251-3
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V Current - Collector Cutoff (Max) 10µA
Current - Collector (Ic) (Max) 8A Base Part Number MJD122

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