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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD112G

MJD112G

MJD112G
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number MJD112G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 2A DPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 214704 pcs
Reference Price
(In US Dollars)		1 pcs75 pcs150 pcs525 pcs1050 pcs
$0.235$0.187$0.149$0.117$0.091

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Target Price:(USD)
Quantity:
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$0.235

Product parameter

Part Number MJD112G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 2A DPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 214704 pcs Data sheet MJD112,117
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A Transistor Type NPN - Darlington
Supplier Device Package DPAK Series -
Power - Max 1.75W Packaging Tube
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Other Names MJD112G-ND
MJD112GOS
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 5 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 25MHz
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Current - Collector Cutoff (Max) 20µA Current - Collector (Ic) (Max) 2A
Base Part Number MJD112

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