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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD122G

MJD122G

MJD122G
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Part Number MJD122G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 8A DPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 208159 pcs
Reference Price
(In US Dollars)		1 pcs75 pcs150 pcs525 pcs1050 pcs
$0.244$0.202$0.165$0.13$0.104

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Product parameter

Part Number MJD122G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 8A DPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 208159 pcs Data sheet MJD122/127, NJVMJD122/127
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A Transistor Type NPN - Darlington
Supplier Device Package DPAK Series -
Power - Max 1.75W Packaging Tube
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Other Names MJD122G-ND
MJD122GOS
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 15 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 4MHz
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
Current - Collector Cutoff (Max) 10µA Current - Collector (Ic) (Max) 8A
Base Part Number MJD122

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