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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD112RL

MJD112RL

MJD112RL
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Part Number MJD112RL
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 2A DPAK
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 5813 pcs
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Part Number MJD112RL Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 2A DPAK Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 5813 pcs Data sheet MJD112,117
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A Transistor Type NPN - Darlington
Supplier Device Package DPAK Series -
Power - Max 1.75W Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant Frequency - Transition 25MHz
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Current - Collector Cutoff (Max) 20µA Current - Collector (Ic) (Max) 2A
Base Part Number MJD112

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