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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD112TF

MJD112TF

MJD112TF
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number MJD112TF
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 2A DPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 275144 pcs
Reference Price
(In US Dollars)
2000 pcs6000 pcs10000 pcs
$0.09$0.084$0.083

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Product parameter

Part Number MJD112TF Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 2A DPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 275144 pcs Data sheet MJD112
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A Transistor Type NPN - Darlington
Supplier Device Package D-Pak Series -
Power - Max 1.75W Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Other Names MJD112TF-ND
MJD112TFTR
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 12 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 25MHz
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount D-Pak DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Current - Collector Cutoff (Max) 20µA Current - Collector (Ic) (Max) 2A
Base Part Number MJD112

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