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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD112-001

MJD112-001

MJD112-001
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number MJD112-001
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 2A IPAK
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 5901 pcs
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Part Number MJD112-001 Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 2A IPAK Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 5901 pcs Data sheet MJD112,117
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A Transistor Type NPN - Darlington
Supplier Device Package I-PAK Series -
Power - Max 1.75W Packaging Tube
Package / Case TO-251-3 Short Leads, IPak, TO-251AA Other Names MJD112-001OS
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Frequency - Transition 25MHz Detailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V Current - Collector Cutoff (Max) 20µA
Current - Collector (Ic) (Max) 2A Base Part Number MJD112

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