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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1112(T5L,F,T)

RN1112(T5L,F,T)

RN1112(T5L,F,T)
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Part Number RN1112(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W SSM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4390 pcs
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Part Number RN1112(T5L,F,T) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W SSM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4390 pcs Data sheet RN1112,1113
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type NPN - Pre-Biased
Supplier Device Package SSM Series -
Resistor - Base (R1) 22 kOhms Power - Max 100mW
Packaging Tape & Reel (TR) Package / Case SC-75, SOT-416
Other Names RN1112(T5LFT)TR
RN1112T5LFT		 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

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