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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI5513CDC-T1-E3

SI5513CDC-T1-E3

SI5513CDC-T1-E3

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Part Number	SI5513CDC-T1-E3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 20V 4A 1206-8
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 203275 pcs
Reference Price (In US Dollars)	1 pcs	10 pcs	100 pcs	500 pcs	1000 pcs
Reference Price (In US Dollars)	$0.278	$0.234	$0.175	$0.129	$0.099

Product parameter
Data sheet

Product parameter

Part Number	SI5513CDC-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 20V 4A 1206-8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	203275 pcs	Data sheet	SI5513CDC
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	1.5V @ 250µA
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	55 mOhm @ 4.3A, 4.5V
Power - Max	3.1W	Packaging	Original-Reel®
Package / Case	8-SMD, Flat Lead	Other Names	SI5513CDC-T1-E3DKR
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	285pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	4.2nC @ 5V
FET Type	N and P-Channel	FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V	Detailed Description	Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount
Current - Continuous Drain (Id) @ 25°C	4A, 3.7A

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